DESCRIPTION:

The CENTRAL SEMICONDUCTOR CZT3150

type is a NPN Silicon Power Transistor

manufactured by the epitaxial planar process,

epoxy molded in a surface mount package,

designed for high current, high gain, fast

switching applications.

MARKING CODE: FULL PART NUMBER

MAXIMUM RATINGS: (TA=25°C)

UNITS

Collector-Base Voltage

VCBO

50

V

Collector-Emitter Voltage

VCEO

25

V

Emitter-Base Voltage

VEBO

7.0

V

Collector Current

IC

5.0

A

Base Current

IB

1.0

A

Power Dissipation

PD

2.0

W

Operating and Storage

Junction Temperature

TJ,Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

62.5

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

ICBO

VCB=50V

1.0

µA

IEBO

VEB=7.0V

1.0

µA

BVCEO

IC=10mA

25

V

VCE(SAT)

IC=3.0A, IB=150mA

0.35

V

VCE(SAT)

IC=4.0A, IB=200mA

0.50

V

VBE(SAT)

IC=3.0A, IB=150mA

1.10

V

VBE(SAT)

IC=4.0A, IB=200mA

1.40

V

hFE

VCE=2.0V, IC=500mA

250

550

hFE

VCE=2.0V, IC=2.0A

150

hFE

VCE=2.0V, IC=5.0A

50

fT

VCE=6.0V, IC=50mA, f=200MHz

150

MHz

Cob

VCB=10V, IE=0, f=1.0MHz

50

pF

CZT3150

SURFACE MOUNT

NPN SILICON POWER TRANSISTOR

SOT-223 CASE

Central

Semiconductor Corp.

TM

R4 (17-June 2004)