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1PS88SB82 データシート(PDF) 4 Page - NXP Semiconductors |
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1PS88SB82 データシート(HTML) 4 Page - NXP Semiconductors |
4 / 8 page 2001 Feb 16 4 Philips Semiconductors Product specification Schottky barrier triple diode 1PS88SB82 GRAPHICAL DATA handbook, halfpage 1.6 0 (3) 0.4 0.8 1.2 VF (V) IF (mA) 103 102 10 1 MLD549 (1) (2) (1) (2) (3) Fig.2 Forward current as a function of forward voltage; typical values. (1) Tamb = 125 °C. (2) Tamb =85 °C. (3) Tamb =25 °C. handbook, halfpage 15 10 VR (V) IR ( µA) 5 0 (3) MLD550 103 102 10 1 10−1 10−2 (1) (2) Fig.3 Reverse current as a function of reverse voltage; typical values. (1) Tamb = 125 °C. (2) Tamb =85 °C. (3) Tamb =25 °C. handbook, halfpage 010 1.2 0 0.4 0.6 0.8 1 2 Cd (pF) VR (V) 46 8 MLD551 Fig.4 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tamb =25 °C. handbook, halfpage 103 102 10 1 MLD552 10−1 1 IF (mA) rD ( Ω) 10 102 Fig.5 Differential diode forward resistance as a function of forward current; typical values. f = 1 MHz; Tamb =25 °C. |
同様の部品番号 - 1PS88SB82 |
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同様の説明 - 1PS88SB82 |
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