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2N1711 データシート(PDF) 3 Page - NXP Semiconductors |
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2N1711 データシート(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1997 May 28 3 Philips Semiconductors Product specification NPN medium power transistor 2N1711 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL CHARACTERISTICS CHARACTERISTICS Tamb =25 °C unless otherwise specified. Note 1. Pulse test: tp ≤ 300 µs; δ≤ 0.02. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 75 V VCEO collector-emitter voltage open base − 50 V VEBO emitter-base voltage open collector − 7V IC collector current (DC) − 500 mA ICM peak collector current − 1A IBM peak base current − 200 mA Ptot total power dissipation Tamb ≤ 25 °C − 0.8 W Tcase ≤ 100 °C − 1.7 W Tcase ≤ 25 °C − 3W Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C Tamb operating ambient temperature −65 +150 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air 219 K/W Rth j-c thermal resistance from junction to case 58.3 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB =60V − 10 nA IE = 0; VCB =60V; Tamb = 150 °C − 10 µA IEBO emitter cut-off current IC = 0; VEB =5V − 5nA hFE DC current gain IC =10 µA; VCE =10V 20 − IC = 0.1 mA; VCE =10V 35 − IC = 10 mA; VCE = 10 V; note 1 75 − IC = 10 mA; VCE =10V; Tamb = −55 °C35 − IC = 150 mA; VCE = 10 V; note 1 100 300 IC = 500 mA; VCE = 10 V; note 1 40 − VCEsat collector-emitter saturation voltage IC = 150 mA; IB = 15 mA; note 1 − 500 mV VBEsat base-emitter saturation voltage IC = 150 mA; IB = 15 mA; note 1 − 1.3 V fT transition frequency IC = 50 mA; VCE = 10 V; f = 100 MHz 70 − MHz Cc collector capacitance IE =ie = 0; VCB = 10 V; f = 1 MHz − 25 pF Ce emitter capacitance IC =ic = 0; VEB = 0.5 V; f = 1 MHz − 80 pF |
同様の部品番号 - 2N1711 |
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同様の説明 - 2N1711 |
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