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2N2369 データシート(PDF) 4 Page - NXP Semiconductors

部品番号 2N2369
部品情報  NPN switching transistor
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メーカー  PHILIPS [NXP Semiconductors]
ホームページ  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

2N2369 データシート(HTML) 4 Page - NXP Semiconductors

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1997 Jun 20
4
Philips Semiconductors
Product specification
NPN switching transistor
2N2369
CHARACTERISTICS
Tj =25 °C unless otherwise specified.
Note
1. Pulse test: tp ≤ 300 µs; δ≤ 0.01.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =20V
400
nA
IE = 0; VCB =20V; Tj = 125 °C
30
µA
IEBO
emitter cut-off current
IC = 0; VEB =4V
100
nA
hFE
DC current gain
IC = 10 mA; VCE = 1 V; note 1
40
120
IC = 10 mA; VCE =1V; Tj = −55 °C; note 1
20
IC = 100 mA; VCE = 2 V; note 1
20
VCEsat
collector-emitter saturation voltage
IC = 10 mA; IB =1mA
250
mV
VBEsat
base-emitter saturation voltage
IC = 10 mA; IB = 1 mA
700
850
mV
Cc
collector capacitance
IE =ie = 0; VCB =5V; f=1MHz
4pF
fT
transition frequency
IC = 10 mA; VCE = 10 V; f = 100 MHz
500
MHz
Switching times (between 10% and 90% levels); see Fig.2
ton
turn-on time
ICon = 10 mA; IBon = 3 mA; IBoff = −1.5 mA
10
ns
td
delay time
4ns
tr
rise time
6ns
toff
turn-off time
30
ns
ts
storage time
15
ns
tf
fall time
15
ns
Vi = 0.5 V to 4.2 V; T = 500 µs; tp =10 µs; tr =tf ≤ 3 ns.
R1 = 56
Ω; R2 = 1 kΩ; R
B =1kΩ; RC = 270 Ω.
VBB = 0.2 V; VCC = 2.7 V.
Oscilloscope input impedance Zi =50 Ω.
handbook, full pagewidth
RC
R2
R1
DUT
MLB826
Vo
RB
(probe)
450
(probe)
450
oscilloscope
oscilloscope
VBB
Vi
VCC
Fig.2 Test circuit for switching times.


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