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GS74108ATP-10 データシート(PDF) 3 Page - GSI Technology

部品番号 GS74108ATP-10
部品情報  512K x 8 4Mb Asynchronous SRAM
Download  13 Pages
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メーカー  GSI [GSI Technology]
ホームページ  http://www.gsitechnology.com
Logo GSI - GSI Technology

GS74108ATP-10 データシート(HTML) 3 Page - GSI Technology

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Truth Table
CE
OE
WE
DQ1 to DQ8
VDD Current
H
X
X
Not Selected
ISB1, ISB2
L
L
H
Read
IDD
L
X
L
Write
L
H
H
High Z
GS74108ATP/J/X
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.07 1/2006
3/13
© 2001, Giga Semiconductor, Inc.
Note:
X: “H” or “L”
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply Voltage
VDD
–0.5 to +4.6
V
Input Voltage
VIN
–0.5 to VDD +0.5
(
≤ 4.6 V max.)
V
Output Voltage
VOUT
–0.5 to VDD +0.5
(
≤ 4.6 V max.)
V
Allowable power dissipation
PD
0.7
W
Storage temperature
TSTG
–55 to 150
oC
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended
Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage for -8/-10/-12
VDD
3.0
3.3
3.6
V
Input High Voltage
VIH
2.0
VDD +0.3
V
Input Low Voltage
VIL
–0.3
0.8
V
Ambient Temperature,
Commercial Range
TAc
0
70
oC
Ambient Temperature,
Industrial Range
TAI
–40
85
oC
Notes:
1. Input overshoot voltage should be less than VDD +2 V and not exceed 20 ns.
2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns.


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