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GS78116B-10 データシート(PDF) 3 Page - GSI Technology |
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GS78116B-10 データシート(HTML) 3 Page - GSI Technology |
3 / 11 page Rev: 1.02 9/2001 3/11 © 1999, Giga Semiconductor, Inc. For latest documentation see http://www.gsitechnology.com. GS78116B Note: X: “H” or “L” Note: Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability. Notes: 1. Input overshoot voltage should be less than VDD +2 V and not exceed 20 ns. 2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns. Truth Table CE OE WE DQ1 to DQ8 VDD Current H X X Not Selected ISB1, ISB2 L L H Read L X L Write IDD L H H High Z Absolute Maximum Ratings Parameter Symbol Rating Unit Supply Voltage VDD –0.5 to +4.6 V Input Voltage VIN –0.5 to VDD +0.5 ( ≤ 4.6 V max.) V Output Voltage VOUT –0.5 to VDD+0.5 ( ≤ 4.6 V max.) V Allowable power dissipation PD 1.5 W Storage temperature TSTG –55 to 150 oC Recommended Operating Conditions Parameter Symbol Min Typ Max Unit Supply Voltage for -10/12/15 VDD 3.0 3.3 3.6 V Input High Voltage VIH 2.0 — VDD +0.3 V Input Low Voltage VIL –0.3 — 0.8 V Ambient Temperature, Commercial Range TAc 0 — 70 oC Ambient Temperature, Industrial Range TAi –40 — 85 oC |
同様の部品番号 - GS78116B-10 |
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同様の説明 - GS78116B-10 |
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