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AM29DL640G データシート(PDF) 1 Page - Advanced Micro Devices

部品番号 AM29DL640G
部品情報  64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
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メーカー  AMD [Advanced Micro Devices]
ホームページ  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29DL640G データシート(HTML) 1 Page - Advanced Micro Devices

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PRELIMINARY
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice.
Publication# 25693
Rev: A Amendment/+2
Issue Date: June 7, 2002
Refer to AMD’s Website (www.amd.com) for the latest information.
Am29DL640G
64 Megabit (8 M x 8-Bit/4 M x 16-Bit)
CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
■ Simultaneous Read/Write operations
— Data can be continuously read from one bank while
executing erase/program functions in another bank.
— Zero latency between read and write operations
■ Flexible BankTM architecture
— Read may occur in any of the three banks not being
written or erased.
— Four banks may be grouped by customer to achieve
desired bank divisions.
■ Boot Sectors
— Top and bottom boot sectors in the same device
— Any combination of sectors can be erased
■ Manufactured on 0.17 µm process technology
■ SecSi™ (Secured Silicon) Sector: Extra 256 Byte
sector
— Factory locked and identifiable: 16 bytes available for
secure, random factory Electronic Serial Number;
verifiable as factory locked through autoselect
function. ExpressFlash option allows entire sector to
be available for factory-secured data
— Customer lockable: One-time programmable only.
Once locked, data cannot be changed
■ Zero Power Operation
— Sophisticated power management circuits reduce
power consumed during inactive periods to nearly
zero.
■ Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash standard
PACKAGE OPTIONS
■ 63-ball Fine Pitch BGA
■ 64-ball Fortified BGA
■ 48-pin TSOP
PERFORMANCE CHARACTERISTICS
■ High performance
— Access time as fast as 65 ns
— Program time: 4 µs/word typical utilizing Accelerate
function
■ Ultra low power consumption (typical values)
— 2 mA active read current at 1 MHz
— 10 mA active read current at 5 MHz
— 200 nA in standby or automatic sleep mode
■ Minimum 1 million write cycles guaranteed per
sector
■ 20 year data retention at 125°C
— Reliable operation for the life of the system
SOFTWARE FEATURES
■ Data Management Software (DMS)
— AMD-supplied software manages data programming,
enabling EEPROM emulation
— Eases historical sector erase flash limitations
■ Supports Common Flash Memory Interface (CFI)
■ Erase Suspend/Erase Resume
— Suspends erase operations to allow reading from
other sectors in same bank
■ Data# Polling and Toggle Bits
— Provides a software method of detecting the status of
program or erase cycles
■ Unlock Bypass Program command
— Reduces overall programming time when issuing
multiple program command sequences
HARDWARE FEATURES
■ Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or erase
cycle completion
■ Hardware reset pin (RESET#)
— Hardware method of resetting the internal state
machine to the read mode
■ WP#/ACC input pin
— Write protect (WP#) function protects sectors 0, 1,
140, and 141, regardless of sector protect status
— Acceleration (ACC) function accelerates program
timing
■ Sector protection
— Hardware method of locking a sector, either
in-system or using programming equipment, to
prevent any program or erase operation within that
sector
— Temporary Sector Unprotect allows changing data in
protected sectors in-system


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