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PZT2222A データシート(PDF) 1 Page - Weitron Technology |
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PZT2222A データシート(HTML) 1 Page - Weitron Technology |
1 / 4 page ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Symbol VCEO VCBO VEBO IC(DC) Value Unit Vdc Vdc Vdc Adc Rating Characteristics Symbol Min Max Unit ELECTRICAL CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC= 10 mAdc, IB=0) Collector-Base Breakdown Voltage (IC=10 µAdc, IE=0) Emitter-Base Breakdown Voltage (IE= 10 µAdc, IC=0) Base-Emitter Cutoff Current (VCE= 60 Vdc,V =-3.0Vdc) Collector-Emitter Cutoff Current (VCE= 60 Vdc,VBE=-3.0Vdc) Emitter-Base Cutoff Current (VEB= 3.0Vdc, I =0) V(BR)CEO V(BR)CBO V(BR)EBO IBEX ICEX IEBO 6.0 - - - - - - 100 Vdc Vdc Vdc nAdc nAdc nAdc PZT2222A SOT-223 Tstg PD C C WEITRON http://www.weitron.com.tw NPN Silicon Planar Epitaxial Transistor (Ta=25 C) W Junction Temperature T j 150 Storage,Temperature -65 to +150 Device Marking PZT2222A=GT2222A 40 75 20 10 NOTE: 1.Device mounted on an epoxy printed circuit board 1.575 inches 1.575 inches 0.059 inches; mounting pad for the 3.EMITTER 2.COLLECTOR 1. BASE BE C Total Device Disspation T =25 C A 1.5 4.COLLECTOR 1 2 3 4 BASE 1 COLLECTOR 2, 4 3 EM ITTER 40 75 6.0 600 collector lead min. 0.93 inches. 2 |
同様の部品番号 - PZT2222A |
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同様の説明 - PZT2222A |
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