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CD214B-B250LF データシート(PDF) 1 Page - Bourns Electronic Solutions |
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CD214B-B250LF データシート(HTML) 1 Page - Bourns Electronic Solutions |
1 / 4 page CD214B-B220 ~ B260 Schottky Barrier Rectifier Chip Diode Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. Features ■ Lead free versions available ■ RoHS compliant (lead free version)* ■ Reverse voltage from 20 to 60 V ■ Forward current of 2 A ■ High current capability ■ For use in low voltage high frequency inverters, free wheeling and polarity protection applications General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Schottky Rectifier Diodes for rectification applications, in compact chip package DO-214AA (SMB) size format, which offer PCB real estate savings and are considerably smaller than competitive parts. The Schottky Rectifier Diodes offer a forward current of 2 A with a choice of repetitive peak reverse voltage of 20 V up to 60 V. Bourns® Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and the flat configuration minimizes roll away. Reliable Electronic Solutions Asia-Pacific: Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116 Europe: Tel: +41-41 768 5555 • Fax: +41-41 768 5510 The Americas: Tel: +1-951 781-5500 • Fax: +1-951 781-5700 www.bourns.com Parameter Symbol CD214B- Unit B220 B230 B240 B250 B260 Forward Voltage (Max.) VF 0.5 0.5 0.5 0.7 0.7 V (If = 2 A) Typical Junction CT 200 pF Capacitance* Reverse Current (Max.) IR 0.5 0.5 0.5 0.5 0.5 mA at Rated VR) Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Absolute Ratings (@ TA = 25 °C Unless Otherwise Noted) Parameter Symbol CD214B- Unit B220 B230 B240 B250 B260 Repetitive Peak VRRM 20 30 40 50 60 V Reverse Voltage Reverse Voltage VR 20 30 40 50 60 V Maximum RMS Voltage VRMS 14 21 28 35 42 V Avg. Forward Current IO 2A Forward Current, Surge Peak Isurge 50 50 50 50 50 A (60 Hz, 1 cycle) Typical Thermal RΘJL 15 15 15 15 15 °C/W Resistance** Storage Temperature TSTG -55 to +150 °C Junction Temperature TJ -55 to +125 °C * Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. ** Thermal resistance junction to lead. *RoHS Directive 2002/95/EC Jan 27 2003 including Annex |
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同様の説明 - CD214B-B250LF |
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