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BC237 データシート(PDF) 4 Page - NXP Semiconductors |
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BC237 データシート(HTML) 4 Page - NXP Semiconductors |
4 / 8 page 1997 Sep 04 4 Philips Semiconductors Product specification NPN general purpose transistors BC237; BC237B CHARACTERISTICS Tamb =25 °C unless otherwise specified. Note 1. Pulse test: tp ≤ 300 µs; δ≤ 0.02. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB =30V −− 15 nA IE = 0; VCB = 30 V; Tj = 150 °C −− 5 µA IEBO emitter cut-off current IC = 0; VEB =5V −− 100 nA hFE DC current gain IC = 0.1 mA; VCE = 5 V; see Fig.2 − 250 − hFE DC current gain IC = 2 mA; VCE = 5 V; see Fig.2 BC237 120 − 460 BC237B 200 − 460 VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 5 mA; note 1 −− 600 mV VBEsat base-emitter saturation voltage IC = 100 mA; IB =5mA −− 1200 mV VBE base-emitter voltage IC = 2 mA; VCE = 5 V 580 − 700 mV Cc collector capacitance IE =ie = 0; VCB = 10 V; f = 1 MHz − 11 − pF Ce emitter capacitance IC =ic = 0; VEB = 0.5 V; f = 1 MHz − 1.5 − pF fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz 100 −− MHz F noise figure IC = 200 µA; VCE =5V; RS =2kΩ; f = 1 kHz; B = 200 Hz −− 10 dB Fig.2 DC current gain; typical values. handbook, full pagewidth 0 300 100 200 MBH724 10−2 10−1 hFE 1 IC (mA) 10 103 102 VCE = 5 V |
同様の部品番号 - BC237 |
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同様の説明 - BC237 |
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