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BC237 データシート(PDF) 4 Page - NXP Semiconductors

部品番号 BC237
部品情報  NPN general purpose transistors
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メーカー  PHILIPS [NXP Semiconductors]
ホームページ  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BC237 データシート(HTML) 4 Page - NXP Semiconductors

  BC237 Datasheet HTML 1Page - NXP Semiconductors BC237 Datasheet HTML 2Page - NXP Semiconductors BC237 Datasheet HTML 3Page - NXP Semiconductors BC237 Datasheet HTML 4Page - NXP Semiconductors BC237 Datasheet HTML 5Page - NXP Semiconductors BC237 Datasheet HTML 6Page - NXP Semiconductors BC237 Datasheet HTML 7Page - NXP Semiconductors BC237 Datasheet HTML 8Page - NXP Semiconductors  
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1997 Sep 04
4
Philips Semiconductors
Product specification
NPN general purpose transistors
BC237; BC237B
CHARACTERISTICS
Tamb =25 °C unless otherwise specified.
Note
1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =30V
−−
15
nA
IE = 0; VCB = 30 V; Tj = 150 °C
−−
5
µA
IEBO
emitter cut-off current
IC = 0; VEB =5V
−−
100
nA
hFE
DC current gain
IC = 0.1 mA; VCE = 5 V; see Fig.2
250
hFE
DC current gain
IC = 2 mA; VCE = 5 V; see Fig.2
BC237
120
460
BC237B
200
460
VCEsat
collector-emitter saturation voltage IC = 100 mA; IB = 5 mA; note 1
−−
600
mV
VBEsat
base-emitter saturation voltage
IC = 100 mA; IB =5mA
−−
1200
mV
VBE
base-emitter voltage
IC = 2 mA; VCE = 5 V
580
700
mV
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
11
pF
Ce
emitter capacitance
IC =ic = 0; VEB = 0.5 V; f = 1 MHz
1.5
pF
fT
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz
100
−−
MHz
F
noise figure
IC = 200 µA; VCE =5V; RS =2kΩ;
f = 1 kHz; B = 200 Hz
−−
10
dB
Fig.2 DC current gain; typical values.
handbook, full pagewidth
0
300
100
200
MBH724
10−2
10−1
hFE
1
IC (mA)
10
103
102
VCE = 5 V


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