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BCP51 データシート(PDF) 2 Page - NXP Semiconductors

部品番号 BCP51
部品情報  PNP medium power transistors
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メーカー  PHILIPS [NXP Semiconductors]
ホームページ  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BCP51 データシート(HTML) 2 Page - NXP Semiconductors

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1999 Apr 08
2
Philips Semiconductors
Product specification
PNP medium power transistors
BCP51; BCP52; BCP53
FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V)
• Medium power (max. 1.3 W).
APPLICATIONS
• Audio, telephony and automotive applications
• Thick and thin-film circuits.
DESCRIPTION
PNP medium power transistor in a SOT223 plastic
package. NPN complements: BCP54, BCP55 and BCP56.
PINNING
PIN
DESCRIPTION
1
base
2, 4
collector
3
emitter
Fig.1 Simplified outline (SOT223) and symbol.
handbook, halfpage
4
12
3
MAM288
Top view
3
2, 4
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
BCP51
−−45
V
BCP52
−−60
V
BCP53
−−100
V
VCEO
collector-emitter voltage
open base
BCP51
−−45
V
BCP52
−−60
V
BCP53
−−80
V
VEBO
emitter-base voltage
open collector
−−5V
IC
collector current (DC)
−−1A
ICM
peak collector current
−−1.5
A
IBM
peak base current
−−0.2
A
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
1.3
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
−65
+150
°C


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