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BCY79 データシート(PDF) 2 Page - NXP Semiconductors |
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BCY79 データシート(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1997 Jun 18 2 Philips Semiconductors Product specification PNP switching transistors BCY78; BCY79 FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Switching and amplification. DESCRIPTION PNP switching transistor in a TO-18 metal package. NPN complements: BCY58 and BCY59. PINNING PIN DESCRIPTION 1 emitter 2 base 3 collector, connected to case Fig.1 Simplified outline (TO-18) and symbol. handbook, halfpage MAM263 1 3 2 3 1 2 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BCY78 −−32 V BCY79 −−45 V VCEO collector-emitter voltage open base BCY78 −−32 V BCY79 −−45 V IC collector current (DC) −−100 mA Ptot total power dissipation Tamb ≤ 45 °C − 340 mW Tcase ≤ 45 °C − 1W hFE DC current gain IC = −2 mA; VCE = −5V BCY78/VII; BCY79/VII 120 220 BCY78/VIII; BCY79/VIII 180 310 BCY78/IX; BCY79/IX 250 460 BCY78/X 380 630 fT transition frequency IC = −10 mA; VCE = −5 V 100 − MHz toff turn-off time ICon = −100 mA; IBon = −10 mA; IBoff =10mA − 400 ns |
同様の部品番号 - BCY79 |
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同様の説明 - BCY79 |
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