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BCY59IX データシート(PDF) 3 Page - NXP Semiconductors |
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BCY59IX データシート(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1997 Jun 17 3 Philips Semiconductors Product specification NPN switching transistors BCY58; BCY59 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL CHARACTERISTICS CHARACTERISTICS Tj =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BCY58 − 32 V BCY59 − 45 V VCEO collector-emitter voltage open base BCY58 − 32 V BCY59 − 45 V VEBO emitter-base voltage open collector − 7V IC collector current (DC) − 100 mA ICM peak collector current − 200 mA IBM peak base current − 200 mA Ptot total power dissipation Tamb ≤ 45 °C − 340 mW Tcase ≤ 45 °C − 1W Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C Tamb operating ambient temperature −65 +150 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air 450 K/W Rth j-c thermal resistance from junction to case 150 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current BCY58 IE = 0; VCB =32V −− 10 nA IE = 0; VCB = 32 V; Tj = 150 °C −− 10 µA ICBO collector cut-off current BCY59 IE = 0; VCB =45V −− 10 nA IE = 0; VCB = 45 V; Tj = 150 °C −− 10 µA IEBO emitter cut-off current IC = 0; VEB =5V −− 10 nA hFE DC current gain IC =10 µA; VCE =5V BCY58/VII; BCY59/VII − 20 − BCY58/VIII; BCY59/VIII 20 95 − BCY58/IX; BCY59/IX 40 190 − BCY58/X; BCY59/X 100 300 − |
同様の部品番号 - BCY59IX |
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同様の説明 - BCY59IX |
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