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BD138 データシート(PDF) 3 Page - NXP Semiconductors |
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BD138 データシート(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1999 Apr 12 3 Philips Semiconductors Product specification PNP power transistors BD136; BD138; BD140 THERMAL CHARACTERISTICS Note 1. Refer to TO-126 (SOT32) standard mounting conditions. CHARACTERISTICS Tj =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 100 K/W Rth j-mb thermal resistance from junction to mounting base 10 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = −30 V −−−100 nA IE = 0; VCB = −30 V; Tj = 125 °C −−−10 µA IEBO emitter cut-off current IC = 0; VEB = −5V −−−100 nA hFE DC current gain VCE = −2 V; (see Fig.2) IC = −5mA 40 −− IC = −150 mA 63 − 250 IC = −500 mA 25 −− DC current gain IC = −150 mA; VCE = −2V; (see Fig.2) BD136-10; BD138-10; BD140-10 63 − 160 BD136-16; BD138-16; BD140-16 100 − 250 VCEsat collector-emitter saturation voltage IC = −500 mA; IB = −50 mA −−−0.5 V VBE base-emitter voltage IC = −500 mA; VCE = −2V −−−1V fT transition frequency IC = −50 mA; VCE = −5V; f = 100 MHz − 160 − MHz DC current gain ratio of the complementary pairs I C = 150 mA; VCE =2V − 1.3 1.6 h FE1 h FE2 ----------- |
同様の部品番号 - BD138 |
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同様の説明 - BD138 |
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