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BF1105WR データシート(PDF) 5 Page - NXP Semiconductors |
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BF1105WR データシート(HTML) 5 Page - NXP Semiconductors |
5 / 16 page 1997 Dec 02 5 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1105; BF1105R; BF1105WR Fig.5 Output characteristics; typical values. VG2-S =4V. Tj =25 °C. handbook, halfpage 024 8 25 0 20 MGM244 6 15 10 5 ID (mA) VDS (V) 1.6 V 1.5 V 1.4 V VG1 = 1.7 V 1.3 V 1.2 V 1.1 V 1 V Fig.6 Transfer characteristics; typical values. VDS =5V. Tj =25 °C. handbook, halfpage 0 40 20 30 10 0 0.5 2.5 MGM245 1 1.5 2 VG1 (V) ID (mA) 3 V 2 V 1 V VG2-S = 4 V 3.5 V 2.5 V 1.5 V Fig.7 Forward transfer admittance as a function of drain current; typical values. VDS =5V. Tj =25 °C. handbook, halfpage 0 102030 40 30 10 0 20 MGM246 ID (mA) yfs (mS) 3.5 V 3 V 2.5 V 2 V VG2-S = 4 V Fig.8 Drain current as a function of gate 2 voltage; typical values. handbook, halfpage 0 16 8 12 4 0 15 MGM247 23 4 ID (mA) VG2-S (V) (1) (2) (3) (4) (5) (1) VDS =5V. (2) VDS = 4.5 V. (3) VDS =4V. (4) VDS = 3.5 V. (5) VDS =3V. |
同様の部品番号 - BF1105WR |
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同様の説明 - BF1105WR |
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