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BF1109 データシート(PDF) 8 Page - NXP Semiconductors |
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BF1109 データシート(HTML) 8 Page - NXP Semiconductors |
8 / 16 page 1997 Dec 08 8 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1109; BF1109R; BF1109WR Fig.16 Gain test circuit. VDS = 9 V, GS = 2 mS, GL = 0.5 mS, f = 200 MHz. L1 = 45 nH, 4 turns, internal diameter = 4 mm, 0.8 mm copper wire. L2 = 160 nH, 3 turns, internal diameter = 8 mm, 0.8 mm copper wire; tapped at approximately half a turn from the cold side, to set GL = 0.5 mS. C1 adjusted for GS = 2 mS. handbook, full pagewidth BF1109 BF1109R BF1109WR MDA624 330 k Ω 47 k Ω 15 pF 5.5 pF C1 1 nF 1 nF 1 nF 1 nF 1 nF 1 nF VAGC VDS G1 G2 S D 1 nF 330 k Ω 1 nF BB405 10 pF BB405 input 50 Ω Vtun input output 50 Ω Vtun output L2 L1 2 µH Fig.17 Gain test circuit. VDS = 9 V, GS = 3.3 mS, GL = 1 mS, f = 800 MHz. L1 = 2 cm, silvered 0.8 mm copper wire 4 mm above ground plane. L2 = 2 cm, silvered 0.8 mm copper wire 4 mm above ground plane. L3 = 11 turns 0.5 mm copper wire without spacing, internal diameter = 3 mm, L = approx. 200 nH. handbook, full pagewidth input 50 Ω output 50 Ω BF1109 BF1109R BF1109WR MDA625 47 k Ω 0.5 to 3.5 pF 1 nF L3 L2 L1 1 nF 1 nF 1 nF VAGC VDS G1 G2 S D ,,, 2 to 18 pF 4 to 40 pF ,,,, ,,,, 0.5 to 3.5 pF 1 nF |
同様の部品番号 - BF1109 |
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同様の説明 - BF1109 |
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