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GY50NC60WD データシート(PDF) 4 Page - STMicroelectronics |
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GY50NC60WD データシート(HTML) 4 Page - STMicroelectronics |
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4 / 11 page  Electrical characteristics STGY50NC60WD 4/11 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Static Symbol Parameter Test conditions Min. Typ. Max. Unit VBR(CES) Collector-emitter breakdown voltage IC= 1mA, VGE= 0 600 V VCE(sat) Collector-emitter saturation voltage VGE= 15V, IC= 40A VGE= 15V, IC=40A,Tc=125°C 1.9 1.7 2.5 V V VGE(th) Gate threshold voltage VCE= VGE, IC= 250µA 3.75 5.75 V ICES Collector cut-off current (VGE = 0) VGE= Max rating,TC= 25°C VGE= Max rating,TC= 125°C 250 1 µA mA IGES Gate-emitter leakage current (VCE = 0) VGE= ±20V , VCE= 0 ±100 nA gfs Forward transconductance VCE = 15V, IC= 20A 20 S Table 4. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Cies Coes Cres Input capacitance Output capacitance Reverse transfer capacitance VCE = 25V, f = 1MHz, VGE = 0 4700 410 90 pF pF pF Qg Qge Qgc Total gate charge Gate-emitter charge Gate-collector charge VCE = 390V, IC = 40A, VGE = 15V, Figure 2 155 32.4 82.2 nC nC nC |
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