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BLF247B データシート(PDF) 4 Page - NXP Semiconductors |
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BLF247B データシート(HTML) 4 Page - NXP Semiconductors |
4 / 16 page August 1994 4 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF247B CHARACTERISTICS Tj =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor section V(BR)DSS drain-source breakdown voltage ID = 50 mA; VGS =0 65 −− V IDSS drain-source leakage current VGS = 0; VDS =28V −− 2.5 mA IGSS gate-source leakage current VGS = ±20 V; VDS =0 −− 1 µA VGSth gate-source threshold voltage ID = 50 mA; VDS =10V 2 − 4.5 V gfs forward transconductance ID = 5 A; VGS =10V 3 4.2 − S RDSon drain-source on-state resistance ID = 5 A; VGS =10V − 0.2 0.3 Ω IDSX drain cut-off current VGS = 10 V; VDS =10V − 22 − A Cis input capacitance VGS = 0; VDS =28V; f=1MHz − 225 − pF Cos output capacitance VGS = 0; VDS =28V; f=1MHz − 180 − pF Crs reverse transfer capacitance VGS = 0; VDS =28V; f=1MHz − 25 − pF Fig.4 Temperature coefficient of gate-source voltage as a function of drain current, typical values per section. VDS =10V. handbook, halfpage 1 5 4 3 10 2 MBD298 10 1 110 2 1 0 TC (mV/K) I (A) D Fig.5 Drain current as a function of gate-source voltage, typical values per section. VDS =10V. 0 5 10 20 40 30 10 0 20 15 V (V) GS (A) D I MBD299 |
同様の部品番号 - BLF247B |
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同様の説明 - BLF247B |
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