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データシートサーチシステム |
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LMX2531LQ1500E データシート(Datasheet) 6 Page - National Semiconductor (TI) |
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6 page ![]() Electrical Characteristics (V CC = 3.0 V, -40˚C ≤ T A ≤ 85 ˚C; f Fout = 1500 MHz, except as specified.) Symbol Parameter Conditions Min Typ Max Units Current Consumption I CC Power Supply Current Divider Disabled 34 41 mA Divider Enabled 37 46 I CCPD Power Down Current CE=0V, Part Initialized 7 µA Oscillator I IHOSC Oscillator Input High Current V IH = 2.75 V 100 µA I ILOSC Oscillator Input Low Current V IL = 0 -100 µA f OSCin Frequency Range 5 80 MHz v OSCin Oscillator Sensitivity 0.5 2.0 Vpp PLL f COMP Phase Detector Frequency 32 MHz I CPout Charge Pump Output Current Magnitude ICP = 0 90 µA ICP = 1 180 µA ICP = 3 360 µA ICP = 15 1440 µA I CPoutTRI CP TRI-STATE Current 0.4 V < V CPout < 2.0 V 2 10 nA I CPoutMM Charge Pump Sink vs. Source Mismatch V CPout = 1.2 V T A = 25˚C 28 % I CPoutV Charge Pump Current vs. CP Voltage Variation 0.4 V < V CPout < 2.0 V T A = 25˚C 4% I CPoutT CP Current vs. Temperature Variation V CPout = 1.2 V 8 % LN(f) Normalized Phase Noise Contribution (Note 2) ICP = 1X Charge Pump Gain 4 kHz Offset -202 dBc/Hz ICP = 16X Charge Pump Gain 4 kHz Offset -212 www.national.com 6 |