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SFRU2955 データシート(PDF) 3 Page - Fairchild Semiconductor |
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SFRU2955 データシート(HTML) 3 Page - Fairchild Semiconductor |
3 / 7 page P-CHANNEL POWER MOSFET Fig 1. Output Characteristics Fig 2. Transfer Characteristics Fig 6. Gate Charge vs. Gate-Source Voltage Fig 5. Capacitance vs. Drain-Source Voltage Fig 4. Source-Drain Diode Forward Voltage Fig 3. On-Resistance vs. Drain Current SFR/U2955 0 10 20 30 40 50 60 70 0.0 0.1 0.2 0.3 0.4 @ Note : T J = 25 oC V GS = -20 V V GS = -10 V -I D , Drain Current [A] 10 0 10 1 0 200 400 600 800 C iss = C gs + C gd ( C ds = shorted ) C oss = C ds + C gd C rss = C gd @ Notes : 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss -V DS , Drain-Source Voltage [V] 10 -1 10 0 10 1 10 -1 10 0 10 1 @ Notes : 1. 250 µs Pulse Test 2. T C = 25 oC V GS Top : - 15 V - 10V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom : - 4.5 V -V DS , Drain-Source Voltage [V] 0 2 4 6 8 10 12 14 16 0 5 10 V DS = -48 V V DS = -30 V V DS = -12 V @ Notes : I D =-9.4 A Q G , Total Gate Charge [nC] 2 4 6 8 10 10 -1 10 0 10 1 25 oC 150 oC - 55 oC @ Notes : 1. V GS = 0 V 2. V DS = -30 V 3. 250 µs Pulse Test -V GS , Gate-Source Voltage [V] 0.5 1.0 1.5 2.0 2.5 3.0 3.5 10 -1 10 0 10 1 150 oC 25 oC @ Notes : 1. V GS = 0 V 2. 250 µs Pulse Test -V SD , Source-Drain Voltage [V] |
同様の部品番号 - SFRU2955 |
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同様の説明 - SFRU2955 |
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