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ADG1311 データシート(PDF) 4 Page - Analog Devices |
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ADG1311 データシート(HTML) 4 Page - Analog Devices |
4 / 12 page ADG1311/ADG1312/ADG1313 Rev. 0 | Page 4 of 12 SINGLE SUPPLY VDD = 12 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted. Table 2. Y Version1 Parameter 25°C −40°C to +105°C Unit Test Conditions/Comments ANALOG SWITCH Analog Signal Range 0 V to VDD V On Resistance (RON) 325 520 Ω typ VS = 0 V − 10 V, IS = −1 mA; Figure 10 500 Ω max VDD = 10.8 V, VSS = 0 V On Resistance Match Between Channels (∆RON) 10 Ω typ VS = 0 V − 10 V, IS = −1 mA 15 Ω max On Resistance Flatness (RFLAT(ON)) 65 Ω typ VS = +3 V/+6 V/+9 V, IS = −1 mA LEAKAGE CURRENTS VDD = 13.2 V, VSS = 0 V Source Off Leakage, IS (Off ) ±10 nA typ VS = +1 V/+10 V, VD = +10 V/+1 V; Figure 11 Drain Off Leakage, ID (Off ) ±10 nA typ VS = +1 V/+10 V, VD = +10 V/+1 V Figure 11 Channel On Leakage, ID, IS (On) ±10 nA typ VS = VD = +1 V or +10 V; Figure 12 DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current, IINL or IINH 0.001 μA typ VIN = VINL or VINH ±0.1 μA max Digital Input Capacitance, CIN 3 pF typ DYNAMIC CHARACTERISTICS2 tON 120 ns typ RL = 300 Ω, CL = 35 pF 155 210 ns max VS = 8 V; Figure 13 tOFF 45 ns typ RL = 300 Ω, CL = 35 pF 65 80 ns max VS = 8 V; Figure 13 Break-Before-Make Time Delay, tD 50 ns typ RL = 300 Ω, CL = 35 pF (ADG1313 Only) 10 ns min VS1 = VS2 = 8 V; Figure 14 Charge Injection 2 pC typ VS = 6 V, RS = 0 Ω, CL = 1 nF; Figure 15 Off Isolation 80 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; Figure 16 Channel-to-Channel Crosstalk 90 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; Figure 17 −3 dB Bandwidth 500 MHz typ RL = 50 Ω, CL = 5 pF; Figure 18 CS (Off ) 5 pF typ CD (Off ) 5 pF typ CD, CS (On) 10 pF typ POWER REQUIREMENTS VDD = 13.2 V IDD 0.001 μA typ Digital inputs = 0 V or VDD 1.0 μA max IDD 220 μA typ Digital inputs = 5 V 320 μA max 1 Temperature range for Y Version is −40°C to +105°C. 2 Guaranteed by design, not subject to production test. |
同様の部品番号 - ADG1311 |
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同様の説明 - ADG1311 |
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