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MC100EP16VBDR2G データシート(PDF) 3 Page - ON Semiconductor |
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MC100EP16VBDR2G データシート(HTML) 3 Page - ON Semiconductor |
3 / 10 page MC100EP16VB http://onsemi.com 3 Table 3. MAXIMUM RATINGS Symbol Parameter Condition 1 Condition 2 Rating Unit VCC PECL Mode Power Supply VEE = 0 V 6 V VEE NECL Mode Power Supply VCC = 0 V −6 V VI PECL Mode Input Voltage NECL Mode Input Voltage VEE = 0 V VCC = 0 V VI v VCC VI w VEE 6 −6 V V Iout Output Current Continuous Surge 50 100 mA mA IBB VBB Sink/Source ± 0.5 mA TA Operating Temperature Range −40 to +85 °C Tstg Storage Temperature Range −65 to +150 °C qJA Thermal Resistance (Junction−to−Ambient) 0 lfpm 500 lfpm 8 SOIC 8 SOIC 190 130 °C/W °C/W qJC Thermal Resistance (Junction−to−Case) Standard Board 8 SOIC 41 to 44 °C/W qJA Thermal Resistance (Junction−to−Ambient) 0 lfpm 500 lfpm 8 TSSOP 8 TSSOP 185 140 °C/W °C/W qJC Thermal Resistance (Junction−to−Case) Standard Board 8 TSSOP 41 to 44 °C/W qJA Thermal Resistance (Junction−to−Ambient) 0 lfpm 500 lfpm DFN8 DFN8 129 84 °C/W °C/W Tsol Wave Solder Pb Pb−Free 265 265 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Table 4. 100EP DC CHARACTERISTICS, PECL VCC = 3.3 V, VEE = 0 V (Note 2) −40°C 25°C 85°C Symbol Characteristic Min Typ Max Min Typ Max Min Typ Max Unit IEE Power Supply Current 25 34 45 30 36 50 32 38 52 mA VOH Output HIGH Voltage (Note 3) 2125 2250 2375 2125 2250 2375 2125 2250 2375 mV VOL Output LOW Voltage (Note 3) 1305 1430 1555 1305 1400 1555 1305 1380 1555 mV VIH Input HIGH Voltage (Single−Ended) 2075 2420 2075 2420 2075 2420 mV VIL Input LOW Voltage (Single−Ended) 1355 1675 1355 1675 1355 1675 mV VBB Output Voltage Reference 1730 1845 1960 1730 1845 1960 1730 1845 1960 mV VIHCMR Input HIGH Voltage Common Mode Range (Differential Configuration) (Note 4) 2.0 3.3 2.0 3.3 2.0 3.3 V IIH Input HIGH Current 150 150 150 mA IIL Input LOW Current 0.5 0.5 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 2. Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to −2.2 V. 3. All loading with 50 W to VCC − 2.0 V. 4. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential input signal. |
同様の部品番号 - MC100EP16VBDR2G |
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同様の説明 - MC100EP16VBDR2G |
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