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ADR444BRZ データシート(PDF) 6 Page - Analog Devices

部品番号 ADR444BRZ
部品情報  Ultralow Noise, LDO XFET Voltage References with Current Sink and Source
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メーカー  AD [Analog Devices]
ホームページ  http://www.analog.com
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ADR444BRZ データシート(HTML) 6 Page - Analog Devices

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ADR440/ADR441/ADR443/ADR444/ADR445
Rev. A | Page 6 of 20
ADR444 ELECTRICAL CHARACTERISTICS
VIN = 4.6 V to 18 V, TA = 25°C, CIN = COUT = 0.1 μF, unless otherwise noted.
Table 5.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
OUTPUT VOLTAGE
VO
A Grade
4.091
4.096
4.101
V
B Grade
4.0944
4.096
4.0976
V
INITIAL ACCURACY
VOERR
A Grade
5
mV
0.13
%
B Grade
1.6
mV
0.04
%
TEMPERATURE DRIFT
TCVO
A Grade
−40°C < TA < +125°C
2
10
ppm/°C
B Grade
−40°C < TA < +125°C
1
3
ppm/°C
LINE REGULATION
ΔVO/ΔVIN
−40°C < TA < +125°C
10
20
ppm/V
LOAD REGULATION
ΔVO/ΔILOAD
ILOAD = 0 mA to 10 mA, VIN = 5.5 V,
−40°C < TA < +125°C
−50
+50
ppm/mA
ΔVO/ΔILOAD
ILOAD = 0 mA to −5 mA, VIN = 5.5 V,
−40°C < TA < +125°C
−50
+50
ppm/mA
QUIESCENT CURRENT
IIN
No load, −40°C < TA < +125°C
3
3.75
mA
VOLTAGE NOISE
eN p-p
0.1 Hz to 10 Hz
1.8
μV p-p
VOLTAGE NOISE DENSITY
eN
1 kHz
78.6
nV/√Hz
TURN-ON SETTLING TIME
tR
10
μs
LONG-TERM STABILITY1
VO
1000 hours
50
ppm
OUTPUT VOLTAGE HYSTERESIS
VO_HYS
70
ppm
RIPPLE REJECTION RATIO
RRR
fIN = 10 kHz
−75
dB
SHORT CIRCUIT TO GND
ISC
27
mA
SUPPLY VOLTAGE OPERATING RANGE
VIN
4.6
18
V
SUPPLY VOLTAGE HEADROOM
VIN − VO
500
mV
1 The long-term stability specification is noncumulative. The drift in the subsequent 1000-hour period is significantly lower than in the first 1000-hour period.


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