SM2G50US60 datasheet(2/10 Pages) FAIRCHILD

部品番号	SM2G50US60

部品情報	IGBT MODULE

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メーカー	FAIRCHILD [Fairchild Semiconductor]

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Characteristics

C - E Breakdown Voltage

Temperature Coeff. of

Breakdown Voltage

G - E threshold voltage

Collector cutoff Current

G - E leakage Current

Collector to Emitter

saturation voltage

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn on delay time

Turn on rise time

Turn off delay time

Turn off fall time

Turn on Switching Loss

Turn off Switching Loss

Total Switching Loss

Short Circuit withstand Time

Total Gate Charge

Gate-Emitter Charge

Gate-Collector Charge

Symbol

BV

CES

ZV

CES/

ZT

J

V

GE(th)

I

CES

I

GES

V

CE(sat)

Cies

Coes

Cres

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

Tsc

Qg

Qge

Qgc

Min

600

-

5

-

10

-

Typ

-

0.6

6

-

2.1

2.7

4200

400

120

90

65

184

80

1.5

0.9

2.4

-

220

50

90

Max

-

8.5

250

100

2.7

-

250

-

4.8

-

330

-

Units

V

V/

V

uA

nA

V

pF

ns

mJ

uS

nC

ELECTRICAL CHARACTERISTICS (IGBT PART)

(Tc=25

,Unless Otherwise Specified)

Test Conditions

V

GE = 0V , IC = 250

V

GE = 0V , IC = 1mA

I

C =50mA , VCE = VGE

V

CE = VCES , VGE = 0V

V

GE = VGES , VCE = 0V

Ic=50A, V

GE = 15V @Tc= 25

Ic=50A, V

GE = 15V @Tc=100

V

GE = 0V , f = 1(

V

CE = 30V

V

CC = 300V , IC = 50A

V

GE = 15V

R

G = 13 n

Inductive Load

Vcc = 300V, V

GE = 15V

@Tc = 100

Vcc = 300V

V

GE = 15V

Ic = 50A

IGBT MODULE

SM2G50US60

Preliminary

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