BU2722 datasheet(3/7 Pages) PHILIPS

部品番号	BU2722

部品情報	Silicon Diffused Power Transistor

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メーカー	PHILIPS [NXP Semiconductors]

ホームページ	http://www.nxp.com

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3 / 7 page

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2722AF

Fig.1. Test circuit for V

CEOsust.

Fig.2. Oscilloscope display for V

CEOsust.

Fig.3. Switching times waveforms (64 kHz).

Fig.4. Switching times definitions.

Fig.5. Switching times test circuit.

Fig.6. DC current gain. h

FE = f (IC)

Parameter T

hs

(Low and high gain)

+ 50v

100-200R

Horizontal

Vertical

Oscilloscope

1R

6V

30-60 Hz

100R

ICsat

90 %

10 %

tf

ts

IBend

IC

IB

t

- IBM

VCE / V

min

VCEOsust

IC / mA

100

200

250

0

+ 150 v nominal

adjust for ICsat

Lc

Cfb

T.U.T.

LB

IBend

-VBB

V

ICsat

I

end

16 us

6.5 us

5 us

t

TRANSISTOR

DIODE

B

I C

I B

CE

BU2720/22AF

0.01

0.1

1

10

100

1

10

100

Ths = 25 C

Ths = 85 C

VCE = 5 V

hFE

IC / A

September 1997

3

Rev 1.200

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