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H7N0608LD データシート(Datasheet) 6 Page - Renesas Technology Corp

部品番号. H7N0608LD
部品情報  Silicon N Channel MOS FET High Speed Power Switching
ダウンロード  12 Pages
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メーカー  RENESAS [Renesas Technology Corp]
ホームページ  http://www.renesas.com
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 6 page
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H7N0608LD, H7N0608LS, H7N0608LM
Rev.1.00, Oct.30.2003, page 6 of 11
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VGS = 0
f = 1 MHz
Ciss
Coss
Crss
ID = 85 A
VGS
VDS
VGS = 10 V, VDD = 30 V
PW = 5
µs, duty < 1 %
Rg = 4.7
tr
tr
td(on)
td(off)
tf
tf
3000
10000
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
VDD = 50 V
25 V
10 V
VDD = 50 V
25 V
10 V
Reverse Drain Current
IDR (A)
Body-Drain Diode Reverse
Recovery Time
Drain to Source Voltage VDS
(V)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge
Qg (nc)
Dynamic Input Characteristics
Drain Current
ID
(A)
Switching Characteristics




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