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STP190NF04 データシート(PDF) 4 Page - STMicroelectronics |
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STP190NF04 データシート(HTML) 4 Page - STMicroelectronics |
4 / 16 page Electrical characteristics STP190NF04 - STB190NF04 - STB190NF04-1 4/16 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 250µA, VGS =0 40 V IDSS Zero gate voltage drain current (VGS = 0) VDS = max ratings VDS = max ratings, TC = 125°C 1 10 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA 2 4 V RDS(on) Static drain-source on resistance VGS = 10V, ID = 95A 0.0039 0.0043 Ω Table 4. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. Forward transconductance VDS= 15V , ID = 95A 200 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25V, f = 1MHz, VGS = 0 5800 1500 200 pF pF pF td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 20V, ID = 95A RG =4.7Ω VGS = 10V (see Figure 15) 45 380 100 75 ns ns ns ns Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 20V, ID = 190A, VGS = 5V (see Figure 16) 130 40 45 nC nC nC |
同様の部品番号 - STP190NF04 |
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同様の説明 - STP190NF04 |
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