BC327-25 datasheet(1/5 Pages) ONSEMI

部品番号	BC327-25

部品情報	Amplifier Transistors PNP Silicon

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March, 2007 − Rev. 5

1

Publication Order Number:

BC327/D

BC327, BC327−16,

BC327−25, BC327−40

Amplifier Transistors

PNP Silicon

Features

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector −Emitter Voltage

VCEO

−45

Vdc

Collector −Base Voltage

VCES

−50

Vdc

Collector −Emitter Voltage

VEBO

−5.0

Vdc

Collector Current − Continuous

IC

−800

mAdc

Total Power Dissipation @ TA = 25°C

Derate above TA = 25°C

PD

625

5.0

mW

mW/

°C

Total Power Dissipation @ TA = 25°C

Derate above TA = 25°C

PD

1.5

12

W

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

−55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Ambient

RqJA

200

°C/W

Thermal Resistance, Junction−to−Case

RqJC

83.3

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

BCxx = Device Code

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

MARKING DIAGRAM

(Note: Microdot may be in either location)

http://onsemi.com

BC

xx

AYWW

G

COLLECTOR

1

2

BASE

3

EMITTER

See detailed ordering, marking, and shipping information in

the package dimensions section on page 4 of this data sheet.

ORDERING INFORMATION

1 2

3

1

2

BENT LEAD

TAPE & REEL

AMMO PACK

STRAIGHT LEAD

BULK PACK

3

TO−92

CASE 29

STYLE 17

同様の部品番号 - BC327-25

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