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MC10ELT21DG データシート(PDF) 2 Page - ON Semiconductor

部品番号 MC10ELT21DG
部品情報  5 V Differential PECL to TTL Translator
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メーカー  ONSEMI [ON Semiconductor]
ホームページ  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MC10ELT21DG データシート(HTML) 2 Page - ON Semiconductor

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MC10ELT21, MC100ELT21
http://onsemi.com
2
1
2
3
45
6
7
8
Q0
GND
VCC
D0
NC
D0
VBB
NC
PECL
TTL
Figure 1. 8−Lead Pinout and Logic Diagram
(Top View)
Table 1. PIN DESCRIPTION
Pin
Function
Q0
TTL Outputs
D0, DO
PECL Differential Outputs
VBB
Reference Voltage Output
VCC
Positive Supply
GND
Ground
NC
No Connect
EP
Exposed pad must be connected to a
sufficient thermal conduit. Electrically
connect to the most negative supply or
leave floating open.
Table 2. ATTRIBUTES
Characteristics
Value
Internal Input Pulldown Resistor
50 kW
Internal Input Pullup Resistor
N/A
ESD Protection
Human Body Model
> 2 kV
Moisture Sensitivity, Indefinite Time Out of Drypack (Note 1)
Pb Pkg
Pb−Free Pkg
SOIC−8
TSSOP−8
DFN8
Level 1
Level 1
Level 1
Level 1
Level 3
Level 1
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V−0 @ 0.125 in
Transistor Count
81 Devices
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
1. For additional information, see Application Note AND8003/D.
Table 3. MAXIMUM RATINGS
Symbol
Parameter
Condition 1
Condition 2
Rating
Unit
VCC
PECL Power Supply
GND = 0 V
7
V
VIN
PECL Input Voltage
GND = 0 V
VI  VCC
0 to 6
V
IBB
VBB Sink/Source
± 0.5
mA
TA
Operating Temperature Range
−40 to +85
°C
Tstg
Storage Temperature Range
−65 to +150
°C
qJA
Thermal Resistance (Junction−to−Ambient)
0 lfpm
500 lfpm
SOIC−8
SOIC−8
190
130
°C/W
°C/W
qJC
Thermal Resistance (Junction−to−Case)
Standard Board
SOIC−8
41 to 44
°C/W
qJA
Thermal Resistance (Junction−to−Ambient)
0 lfpm
500 lfpm
TSSOP−8
TSSOP−8
185
140
°C/W
°C/W
qJA
Thermal Resistance (Junction−to−Ambient)
0 lfpm
500 lfpm
DFN8
DFN8
129
84
°C/W
°C/W
Tsol
Wave Solder
Pb
Pb−Free
<2 to 3 sec @ 248°C
<2 to 3 sec @ 260°C
265
265
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.


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