MJ15020G datasheet(3/4 Pages) ONSEMI

部品番号	MJ15020G

部品情報	Complementary Silicon Power Transistors

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MJ15020 − NPN

MJ15021 − PNP

http://onsemi.com

3

Figure 2. DC Current Gain

Figure 3. Maximum Rated Forward Biased

Safe Operating Area

5.0

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

7.0 10

500

10

2.0

5.0

100

200

20

30

1.0

0.5

0.02

0.2

WIRE BOND LIMIT

THERMAL LIMIT

SECOND BREAKDOWN

LIMIT

300

1.0

3.0

5.0

10

0.1

0.2

0.5

IC, COLLECTOR CURRENT (AMPS)

TJ = 25°C

VCE = 4.0 Vdc

50

100

20

2.0

200

TC = 25°C

PNP

50 70

2.0

7.0

0.3

0.7

70

30

10

5.0

7.0

3.0

0.7

0.3

0.1

0.03

0.01

0.07

0.05

NPN

MJ15020/21

7.0

TYPICAL DYNAMIC CHARACTERISTICS

同様の部品番号 - MJ15020G

メーカー	部品番号	データシート	部品情報
Motorola, Inc	MJ15020	135Kb / 4P	4.0 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 200 AND 250 VOLTS 150 WATTS
Inchange Semiconductor ...	MJ15020	290Kb / 2P	isc Silicon NPN Darlington Power Transistor
New Jersey Semi-Conduct...	MJ15020	134Kb / 2P	Complementary Silicon Power Transistors

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同様の説明 - MJ15020G

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