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MC100EP116 データシート(PDF) 7 Page - ON Semiconductor |
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MC100EP116 データシート(HTML) 7 Page - ON Semiconductor |
7 / 11 page MC10EP116, MC100EP116 http://onsemi.com 7 Table 9. 100EP DC CHARACTERISTICS, NECL VCC = 0 V, VEE = −5.5 V to −3.0 V (Note 17) −40°C 25°C 85°C Symbol Characteristic Min Typ Max Min Typ Max Min Typ Max Unit IEE Power Supply Current 60 75 90 60 80 95 60 85 95 mA VOH Output HIGH Voltage (Note 18) −1145 −1020 −895 −1145 −1020 −895 −1145 −1020 −895 mV VOL Output LOW Voltage (Note 18) −1945 −1820 −1695 −1945 −1820 −1695 −1945 −1820 −1695 mV VIH Input HIGH Voltage (Single−Ended) −1225 −880 −1225 −880 −1225 −880 mV VIL Input LOW Voltage (Single−Ended) −1945 −1625 −1945 −1625 −1945 −1625 mV VBB Output Voltage Reference −1525 −1425 −1325 −1525 −1425 −1325 −1525 −1425 −1325 mV VIHCMR Input HIGH Voltage Common Mode Range (Differential Configuration) (Note 19) VEE+2.0 0.0 VEE+2.0 0.0 VEE+2.0 0.0 V IIH Input HIGH Current 150 150 150 mA IIL Input LOW Current 0.5 0.5 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 17.Input and output parameters vary 1:1 with VCC. 18.All loading with 50 W to VCC − 2.0 V. 19.VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential input signal. Table 10. AC CHARACTERISTICS VCC = 0 V; VEE = −3.0 V to −5.5 V or VCC = 3.0 V to 5.5 V; VEE = 0 V (Note 20) −40°C 25°C 85°C Symbol Characteristic Min Typ Max Min Typ Max Min Typ Max Unit fmax Maximum Frequency (See Figure 4 Fmax/JITTER) > 3 > 3 > 3 GHz tPLH, tPHL Propagation Delay to Output Differential 160 250 340 160 260 340 190 300 380 ps tSKEW Duty Cycle Skew (Note 21) 5.0 20 5.0 20 5.0 20 ps tSKEW Within Device Skew Device to Device Skew (Note 21) 100 180 100 180 100 190 ps tJITTER Cycle−to−Cycle Jitter (See Figure 4 Fmax/JITTER) 0.2 < 1 0.2 < 1 0.2 < 1 ps VPP Input Voltage Swing (Differential Configuration) 150 800 1200 150 800 1200 150 800 1200 mV tr tf Output Rise/Fall Times Q, Q (20% − 80%) 90 150 220 90 160 240 90 160 250 ps NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 20.Measured using a 750 mV source, 50% duty cycle clock source. All loading with 50 W to VCC − 2.0 V. 21.Skew is measured between outputs under identical transitions. Duty cycle skew is defined only for differential operation when the delays are measured from the cross point of the inputs to the cross point of the outputs. |
同様の部品番号 - MC100EP116 |
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同様の説明 - MC100EP116 |
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