2SC4617 datasheet(2/4 Pages) UTC

部品番号	2SC4617

部品情報	GENERAL PURPOSE TRANSISTOR

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メーカー	UTC [Unisonic Technologies]

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2SC4617

NPN EPITAXIAL SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

2

www.unisonic.com.tw

QW-R206-081,A

ABSOLUATE MAXIUM RATINGS (Ta = 25℃)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector -Base Voltage

VCBO

60

V

Collector -Emitter Voltage

VCEO

50

V

Emitter -Base Voltage

VEBO

7

V

DC Collector Current

IC

150

mA

Power Dissipation

PD

150

mW

Operating Temperature

TJ

+150

℃

Storage Temperature

TSTG

-40 ~ +150

℃

ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector Base Breakdown Voltage

BVCBO

IC= 50μA

60

V

Collector Emitter Breakdown Voltage

BVCEO

IC= 1mA

50

V

Emitter-base Breakdown Voltage

BVEBO

IE=50μA

7

V

Collector Cut-Off Current

ICBO

VCB=60V

0.1

μA

Emitter Cut-Off Current

IEBO

VEB= 7V

0.1

μA

DC Current Transfer Ratio

hFE

VCE=6V,Ic=1mA

120

560

Collector-Emitter Saturation Voltage

VCE(sat)

IC=50mA, IB=5mA

0.4

V

Transition Frequency

fT

VCE=12V, IE= -2mA, f=100MHz

180

MHz

Output Capacitance

Cob

VCE= 12V, IE= 0A, f=1MHz

2

3.5

pF

CLASSIFICATION OF hFE

RANK

Q

R

S

RANGE

120 ~ 270

180 ~ 390

270 ~ 560

同様の部品番号 - 2SC4617

メーカー	部品番号	データシート	部品情報
Motorola, Inc	2SC4617	128Kb / 6P	NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
SeCoS Halbleitertechnol...	2SC4617	345Kb / 2P	NPN Silicon General Purpose Transistor
ON Semiconductor	2SC4617	128Kb / 6P	General Purpose Amplifier Transistors(NPN Silicon) November, 2001 ??Rev. 3
SHENZHEN YONGERJIA INDU...	2SC4617	107Kb / 1P	TRANSISTOR竊뉿PN)
Rohm	2SC4617	77Kb / 3P	2SC4097 / 2SC1741S

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