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M74VHC1GT125DF1G データシート(PDF) 2 Page - ON Semiconductor |
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M74VHC1GT125DF1G データシート(HTML) 2 Page - ON Semiconductor |
2 / 6 page MC74VHC1GT125 http://onsemi.com 2 MAXIMUM RATINGS Symbol Characteristics Value Unit VCC DC Supply Voltage −0.5 to +7.0 V VIN DC Input Voltage −0.5 to +7.0 V VOUT DC Output Voltage VCC = 0 High or Low State −0.5 to 7.0 −0.5 to VCC + 0.5 V IIK Input Diode Current −20 mA IOK Output Diode Current VOUT < GND; VOUT > VCC +20 mA IOUT DC Output Current, per Pin +25 mA ICC DC Supply Current, VCC and GND +50 mA PD Power Dissipation in Still Air SC−88A, TSOP−5 200 mW qJA Thermal Resistance SC−88A, TSOP−5 333 °C/W TL Lead Temperature, 1 mm from Case for 10 s 260 °C TJ Junction Temperature Under Bias +150 °C Tstg Storage Temperature −65 to +150 °C VESD ESD Withstand Voltage Human Body Model (Note 1) Machine Model (Note 2) Charged Device Model (Note 3) > 2000 > 200 N/A V ILatchup Latchup Performance Above VCC and Below GND at 125°C (Note 4) ±500 mA Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Tested to EIA/JESD22−A114−A 2. Tested to EIA/JESD22−A115−A 3. Tested to JESD22−C101−A 4. Tested to EIA/JESD78 RECOMMENDED OPERATING CONDITIONS Symbol Characteristics Min Max Unit VCC DC Supply Voltage 3.0 5.5 V VIN DC Input Voltage 0.0 5.5 V VOUT DC Output Voltage 0.0 VCC V TA Operating Temperature Range −55 +125 °C tr , tf Input Rise and Fall Time VCC = 5.0 V ± 0.5 V 0 20 ns/V Device Junction Temperature versus Time to 0.1% Bond Failures Junction Temperature 5C Time, Hours Time, Years 80 1,032,200 117.8 90 419,300 47.9 100 178,700 20.4 110 79,600 9.4 120 37,000 4.2 130 17,800 2.0 140 8,900 1.0 1 1 10 100 1000 TIME, YEARS FAILURE RATE OF PLASTIC = CERAMIC UNTIL INTERMETALLICS OCCUR Figure 3. Failure Rate vs. Time Junction Temperature |
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同様の説明 - M74VHC1GT125DF1G |
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