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STP11NM60FP データシート(PDF) 5 Page - STMicroelectronics |
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STP11NM60FP データシート(HTML) 5 Page - STMicroelectronics |
5 / 16 page STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1 Electrical characteristics 5/16 Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD=300 V, ID=5.5A, RG=4.7Ω, VGS=10V (see Figure 17) 20 20 ns ns tr(Voff) tf tc Off-voltage rise time Fall time Cross-over time VDD=480V, ID=11A, RG=4.7Ω, VGS=10V (see Figure 17) 6 11 19 ns ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 11 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) 44 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD=11A, VGS=0 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=11A, di/dt = 100A/µs, VDD=100V, Tj=25°C (see Figure 16) 390 3.8 19.5 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=11A, di/dt = 100A/µs, VDD=100V, Tj=150°C (see Figure 16) 570 5.7 20 ns µC A |
同様の部品番号 - STP11NM60FP |
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同様の説明 - STP11NM60FP |
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