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MC74VHCTXXAD データシート(PDF) 3 Page - ON Semiconductor |
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MC74VHCTXXAD データシート(HTML) 3 Page - ON Semiconductor |
3 / 8 page http://onsemi.com 3 AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0ns) Symbol Parameter Test Conditions TA = 25°C TA = − 40 to 85°C Unit Min Typ Max Min Max tPLH, tPHL Maximum Propagation Delay, A to Y VCC = 5.0 ± 0.5V CL = 15pF CL = 50pF 4.7 5.5 6.7 7.7 1.0 1.0 7.5 8.5 ns Cin Maximum Input Capacitance 4 10 10 pF CPD Power Dissipation Capacitance (Note 1) Typical @ 25°C, VCC = 5.0V pF 11 1. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC/6 (per buffer). CPD is used to determine the no−load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC. NOISE CHARACTERISTICS (Input tr = tf = 3.0ns, CL = 50pF, VCC = 5.0V) Symbol Characteristic TA = 25°C Unit Typ Max VOLP Quiet Output Maximum Dynamic VOL 0.8 1.0 V VOLV Quiet Output Minimum Dynamic VOL −0.8 −1.0 V VIHD Minimum High Level Dynamic Input Voltage 2.0 V VILD Maximum Low Level Dynamic Input Voltage 0.8 V Figure 3. Switching Waveforms *Includes all probe and jig capacitance Figure 4. Test Circuit CL* TEST POINT DEVICE UNDER TEST OUTPUT 3V GND 1.5V 1.5V A Y tPHL tPLH VOH VOL |
同様の部品番号 - MC74VHCTXXAD |
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同様の説明 - MC74VHCTXXAD |
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