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BY249-300 データシート(PDF) 1 Page - NXP Semiconductors |
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BY249-300 データシート(HTML) 1 Page - NXP Semiconductors |
1 / 5 page Philips Semiconductors Product specification Rectifier diodes BY249 series general purpose FEATURES SYMBOL QUICK REFERENCE DATA • Low forward volt drop V R = 300 V / 600 V / 800 V • High thermal cycling performance • Low thermal resistance V F ≤ 1.05 V I F(AV) = 7 A I FSM ≤ 60 A GENERAL DESCRIPTION PINNING SOD59 (TO220AC) Glass-passivated double diffused PIN DESCRIPTION rectifier diodes. The devices are intended for low frequency power 1 cathode rectifier applications. 2 anode The BY249 series is supplied in the conventional leaded SOD59 tab cathode (TO220AC) package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX.UNIT UNIT BY249 -300 -600 -800 V RSM Peak non-repetitive reverse - 300 600 800 V voltage V RRM Peak repetitive reverse - 300 600 800 V voltage V RWM Crest working reverse voltage - 200 500 700 V V R Continuous reverse voltage - 200 500 700 V I F(AV) Average forward current 1 sinusoidal; a = 1.57; T mb ≤ 131 ˚C - 7 A I F(RMS) RMS forward current - 11 A I FRM Peak repetitive forward sinusoidal; a = 1.57; - 60 A current I FSM Peak non-repetitive forward t = 10 ms - 60 A current. t = 8.3 ms - 66 A sinusoidal; T j = 150 ˚C prior to surge; with reapplied V RWM(max) I 2tI2t for fusing t = 10 ms - 18 A 2s T stg Storage temperature -40 150 ˚C T j Operating junction - 150 ˚C temperature k a 12 1 tab 2 1 Neglecting switching and reverse current losses. September 1998 1 Rev 1.300 |
同様の部品番号 - BY249-300 |
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同様の説明 - BY249-300 |
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