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MC100EPT25 データシート(PDF) 3 Page - ON Semiconductor

部品番号 MC100EPT25
部品情報  ??.3V / ??V Differential ECL to 3.3V LVTTL Translator
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メーカー  ONSEMI [ON Semiconductor]
ホームページ  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MC100EPT25 データシート(HTML) 3 Page - ON Semiconductor

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MC100EPT25
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3
Table 3. MAXIMUM RATINGS
Symbol
Parameter
Condition 1
Condition 2
Rating
Unit
VCC
Positive Power Supply
GND = 0 V
VEE = −5.0 V
3.8
V
VEE
Negative Power Supply
GND = 0 V
VCC = +3.3 V
−6
V
VIN
Input Voltage
GND = 0 V
0 to VEE
V
IBB
VBB Sink/Source
± 0.5
mA
TA
Operating Temperature Range
−40 to +85
°C
Tstg
Storage Temperature Range
−65 to +150
°C
qJA
Thermal Resistance (Junction−to−Ambient)
0 lfpm
500 lfpm
8 SOIC
8 SOIC
190
130
°C/W
°C/W
qJC
Thermal Resistance (Junction−to−Case)
Standard Board
8 SOIC
41 to 44
°C/W
qJA
Thermal Resistance (Junction−to−Ambient)
0 lfpm
500 lfpm
8 TSSOP
8 TSSOP
185
140
°C/W
°C/W
qJC
Thermal Resistance (Junction−to−Case)
Standard Board
8 TSSOP
41 to 44
°C/W
qJA
Thermal Resistance (Junction−to−Ambient)
0 lfpm
500 lfpm
DFN8
DFN8
129
84
°C/W
°C/W
Tsol
Wave Solder
Pb
Pb−Free
<2 to 3 sec @ 248°C
<2 to 3 sec @ 260°C
265
265
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 4. NECL DC CHARACTERISTICS VCC = 3.3 V; VEE = −5.5 V to −3.0 V; GND = 0.0 V (Note 2)
Symbol
Characteristic
−40°C
25°C
85°C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
IEE
Power Supply Current
8.0
16
25
8.0
16
25
8.0
16
25
mA
VIH
Input HIGH Voltage Single−Ended
−1225
−880
−1225
−880
−1225
−880
mV
VIL
Input LOW Voltage Single−Ended
−1945
−1625 −1945
−1625 −1945
−1625
mV
VBB
Output Voltage Reference
−1525 −1425 −1325 −1525 −1425 −1325 −1525 −1425 −1325
mV
VIHCMR
Input HIGH Voltage Common Mode
Range (Note 3)
VEE + 2.0
0.0
VEE + 2.0
0.0
VEE + 2.0
0.0
V
IIH
Input HIGH Current
150
150
150
mA
IIL
Input LOW Current
0.5
0.5
0.5
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
2. Input parameters vary 1:1 with GND.
3. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential
input signal.
Table 5. TTL OUTPUT DC CHARACTERISTICS VCC = 3.3 V; VEE = −5.5 V to −3.0 V; GND = 0.0 V; TA = −40°C to 85°C
Symbol
Characteristic
Condition
Min
Typ
Max
Unit
VOH
Output HIGH Voltage
IOH = −3.0 mA
2.2
V
VOL
Output LOW Voltage
IOL = 24 mA
0.5
V
ICCH
Power Supply Current
6
10
14
mA
ICCL
Power Supply Current
7
12
17
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.


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