データシートサーチシステム |
|
IRLZ34 データシート(PDF) 4 Page - NXP Semiconductors |
|
IRLZ34 データシート(HTML) 4 Page - NXP Semiconductors |
4 / 7 page Philips Semiconductors Product specification N-channel enhancement mode IRLZ34N Logic level TrenchMOS TM transistor Fig.5. Typical output characteristics, T j = 25 ˚C. I D = f(VDS); parameter VGS Fig.6. Typical on-state resistance, T j = 25 ˚C. R DS(ON) = f(ID); parameter VGS Fig.7. Typical transfer characteristics. I D = f(VGS) ; conditions: VDS = 25 V; parameter Tj Fig.8. Typical transconductance, T j = 25 ˚C. g fs = f(ID); conditions: VDS = 25 V Fig.9. Normalised drain-source on-state resistance. a = R DS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 17 A; VGS = 5 V Fig.10. Gate threshold voltage. V GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS 0246 8 10 0 20 40 60 80 100 10 7 VGS = 6.0 V 5.6 5.0 4.6 4.0 3.6 3.0 Drain current, ID (A) Drain-source voltage, VDS (V) 0 1020 3040 506070 5 10 15 20 25 30 Transconductance, gfs (S) Drain current, ID (A) 0 1020 3040 5060 25 30 35 40 45 RDS(ON)/mOhm VGS/V = ID/A 4 4.2 4.4 4.6 4.8 5 -100 -50 0 50 100 150 200 0.5 1 1.5 2 2.5 BUK959-60 Tmb / degC Rds(on) normlised to 25degC a 0 1 2 345 67 0 10 20 30 40 50 60 70 ID/A VGS/V Tj/C = 175 25 BUK959-60 -100 -50 0 50 100 150 200 0 0.5 1 1.5 2 2.5 Tj / C VGS(TO) / V max. typ. min. February 1999 4 Rev 1.000 |
同様の部品番号 - IRLZ34 |
|
同様の説明 - IRLZ34 |
|
|
リンク URL |
プライバシーポリシー |
ALLDATASHEET.JP |
ALLDATASHEETはお客様のビジネスに役立ちますか? [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |