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AM29LV2562M データシート(PDF) 3 Page - Advanced Micro Devices

部品番号 AM29LV2562M
部品情報  512 Megabit (16 M x 32-Bit/32 M x 16-Bit) MirrorBit??3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O??Control
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メーカー  AMD [Advanced Micro Devices]
ホームページ  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29LV2562M データシート(HTML) 3 Page - Advanced Micro Devices

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This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication# 26494
Rev: B Amendment/+2
Issue Date: December 16, 2005
Refer to AMD’s Website (www.amd.com) for the latest information.
Am29LV2562M
512 Megabit (16 M x 32-Bit/32 M x 16-Bit)
MirrorBit
™ 3.0 Volt-only Uniform Sector
Flash Memory with VersatileI/O
™ Control
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
Single power supply operation
— 3 volt read, erase, and program operations
VersatileI/O
TM control
— Device generates data output voltages and tolerates
data input voltages on the CE# and DQ inputs/outputs
as determined by the voltage on the V
IO pin; operates
from 1.65 to 3.6 V
Manufactured on 0.23 µm MirrorBitTM process
technology
SecSi
™ (Secured Silicon) Sector region
— 128-doubleword/256-word sector for permanent,
secure identification through an
8-doubleword/16-word random Electronic Serial
Number, accessible through a command sequence
— May be programmed and locked at the factory or by
the customer
Flexible sector architecture
— Five hundred twelve 32 Kdoubleword (64 Kword)
sectors
Compatibility with JEDEC standards
— Provides pinout and software compatibility for
single-power supply flash, and superior inadvertent
write protection
100,000 erase cycles per sector
20-year data retention at 125
°C
PERFORMANCE CHARACTERISTICS
High performance
— 120 ns access time
— 30 ns page read times
— 0.5 s typical sector erase time
— 15 µs typical write buffer doubleword programming
time: 16-doubleword/32-word write buffer reduces
overall programming time for multiple-word updates
— 4-doubleword/8-word page read buffer
— 16-doubleword/32-word write buffer
Low power consumption (typical values at 3.0 V, 5
MHz)
— 26 mA typical active read current
— 100 mA typical erase/program current
— 2 µA typical standby mode current
Package options
— 80-ball Fortified BGA
SOFTWARE & HARDWARE FEATURES
Software features
— Program Suspend & Resume: read other sectors
before programming operation is completed
— Erase Suspend & Resume: read/program other
sectors before an erase operation is completed
— Data# polling & toggle bits provide status
— Unlock Bypass Program command reduces overall
multiple-word or byte programming time
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
Hardware features
— Sector Group Protection: hardware-level method of
preventing write operations within a sector group
— Temporary Sector Group Unprotect: V
ID-level method
of changing code in locked sector groups
— WP#/ACC input accelerates programming time
(when high voltage is applied) for greater throughput
during system production. Protects first or last sector
regardless of sector protection settings
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) detects program or
erase cycle completion
This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the
factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this
document is retained for reference and historical purposes only.


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