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FDC640P データシート(PDF) 1 Page - Fairchild Semiconductor |
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FDC640P データシート(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page January 2001 2001 Fairchild Semiconductor International FDC640P Rev E(W) FDC640P P-Channel 2.5V PowerTrench Specified MOSFET General Description This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Applications • Battery management • Load switch • Battery protection Features • –4.5 A, –20 V RDS(ON) = 0.053 Ω @ V GS = –4.5 V RDS(ON) = 0.080 Ω @ V GS = –2.5 V • Rugged gate rating (±12V) • Fast switching speed • High performance trench technology for extremely low RDS(ON) D D D S D G SuperSOT -6 TM 6 5 4 1 2 3 Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –20 V VGSS Gate-Source Voltage ±12 V ID Drain Current – Continuous (Note 1a) –4.5 A – Pulsed –20 Maximum Power Dissipation (Note 1a) 1.6 W PD (Note 1b) 0.8 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .640 FDC640P 7’’ 8mm 3000 units |
同様の部品番号 - FDC640P |
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同様の説明 - FDC640P |
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