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データシートサーチシステム |
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データシートサーチシステム |
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FDZ293P データシート(PDF) 4 Page - Fairchild Semiconductor |
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FDZ293P データシート(HTML) 4 Page - Fairchild Semiconductor |
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4 / 5 page  FDZ293P Rev. D (W) Typical Characteristics 0 1 2 3 4 5 0 2 4 6 8 10 Qg, GATE CHARGE (nC) ID = -4.6A VDS = -5V -15V -10V 0 200 400 600 800 1000 1200 0 5 10 15 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Ciss Crss Coss f = 1MHz VGS = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) DC 100ms rDS(on) LIMIT VGS = -4.5V SINGLE PULSE RθJA = 157 oC/W TA = 25 oC 10ms 1ms 100µs 10s 1s 0 5 10 15 20 0.01 0.1 1 10 100 1000 t1, TIME (sec) SINGLE PULSE RθJA = 157°C/W TA = 25°C Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) RθJA(t) = r(t) * RθJA RθJA = 157 °C/W TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 P(pk) t1 t2 SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. |
同様の部品番号 - FDZ293P_06 |
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同様の説明 - FDZ293P_06 |
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