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FMB5551 データシート(PDF) 1 Page - Fairchild Semiconductor |
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FMB5551 データシート(HTML) 1 Page - Fairchild Semiconductor |
1 / 3 page ©2004 Fairchild Semiconductor Corporation Rev. A1, August 2004 Absolute Maximum Ratings T a=25°C unless otherwise noted * Pd total, for both transistors. For each transistor, Pd = 350mW. Electrical Characteristics T a=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 160 V VCBO Collector-Base Voltage 180 V VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 600 mA PC Collector Dissipation (Ta=25°C) * 0.7 W TJ Junction Temperature 150 °C TSTG Storage Temperature Range - 55 ~ 150 °C RθJA Thermal Resistance, Junction to Ambient 180 °C/W Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics BVCEO Collector-Emitter Voltage IC = 1mA 160 V BVCBO Collector-Base Voltage IC = 10µA 180 V BVEBO Emitter-Base Voltage IE = 10µA6 V ICBO Collector Cut-off Current VCB = 120V VCB = 120V, T = 100°C 50 50 nA µA IEBO Emitter Cut-off Current VEB = 4V 50 nA On Characteristics hFE DC Current Gain VCE = 5V, IC = 1mA VCE = 5V, IC = 10mA VCE = 5V, IC = 50mA 80 80 30 250 VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA 0.15 0.2 V VBE(sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA 1 1 V Small Signal Characteristics TYPICAL Cob Output Capacitance VCB = 10V, f = 1MHz 6 pF Cib Input Capacitance VCB = 0.5V, f = 1MHz 20 pF fT Current gain Bandwidth Product VCE = 10V, IC = 10mA f = 100MHz 100 300 MHz NF Noise Figure VCE = 5V, IC = 200µA f = 1MHz, RS = 2kΩ, B = 200Hz 8dB hFE Small Signal Current Gain VCE = 10V, IC = 1mA f = 1KHz 50 250 FMB5551 NPN General Purpose Amplifier SuperSOT-6 Surface Mount Package • This device is designed for general purpose high voltage amplifiers and gas discharge display driving. • Sourced from process 16. • See MMBT5551 for characteristics. C1 E1 C2 B1 E2 B2 SuperSOTTM-6 Mark: .3S pin #1 Dot denotes pin #1 |
同様の部品番号 - FMB5551 |
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同様の説明 - FMB5551 |
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