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FQA7N80C_F109 データシート(PDF) 3 Page - Fairchild Semiconductor |
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FQA7N80C_F109 データシート(HTML) 3 Page - Fairchild Semiconductor |
3 / 9 page 3 www.fairchildsemi.com FQA7N80C Rev. A1 Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperatue Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 24 68 10 10 -1 10 0 10 1 150 oC 25 oC -55 oC Notes : ※ 1. V DS = 50V 2. 250µs PulseTest V GS, Gate-Source Voltage [V] 10 -1 10 0 10 1 10 -2 10 -1 10 0 10 1 V GS Top: 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V Bottom: 5.5V Notes : ※ 1. 250µs PulseTest 2. T C = 25℃ V DS, Drain-Source Voltage [V] 0.20.4 0.60.8 1.01.2 1.4 10 -1 10 0 10 1 150℃ Notes : ※ 1. V GS = 0V 2. 250µs PulseTest 25℃ V SD, Source-Drain voltage [V] 0 3 6 9 12 15 18 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V GS = 20V V GS = 10V Note: T ※ J = 25℃ I D, Drain Current [A] 10 -1 10 0 10 1 0 500 1000 1500 2000 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd Notes : ※ 1. V GS = 0 V 2. f =1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] 0 5 10 15 20 25 30 0 2 4 6 8 10 12 V DS = 400V V DS = 160V V DS = 640V Note : I ※ D = 6.6A Q G, Total Gate Charge [nC] |
同様の部品番号 - FQA7N80C_F109 |
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同様の説明 - FQA7N80C_F109 |
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