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ISL9V3040S3ST データシート(PDF) 4 Page - Fairchild Semiconductor |
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ISL9V3040S3ST データシート(HTML) 4 Page - Fairchild Semiconductor |
4 / 8 page ©2004 Fairchild Semiconductor Corporation ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D3, October 2004 Typical Performance Curves (Continued) Figure 7. Collector to Emitter On-State Voltage vs Collector Current Figure 8. Transfer Characteristics Figure 9. DC Collector Current vs Case Temperature Figure 10. Threshold Voltage vs Junction Temperature Figure 11. Leakage Current vs Junction Temperature Figure 12. Switching Time vs Junction Temperature VCE, COLLECTOR TO EMITTER VOLTAGE (V) 25 15 5 0 20 10 02.0 1.0 3.0 4.0 VGE = 4.0V VGE = 3.7V VGE = 4.5V VGE = 5.0V VGE = 8.0V TJ = 175°C VGE, GATE TO EMITTER VOLTAGE (V) 2.0 1.0 3.0 4.0 25 15 5 0 20 10 PULSE DURATION = 250µs DUTY CYCLE < 0.5%, VCE = 5V TJ = 25°C TJ = 150°C 2.5 1.5 3.5 4.5 TJ = -40°C TC, CASE TEMPERATURE (°C) 25 25 175 125 75 50 100 150 20 15 10 5 0 VGE = 4.0V 2.2 175 50 100 2.0 1.8 1.6 1.4 1.0 VCE = VGE TJ JUNCTION TEMPERATURE (°C) 150 0 -50 125 75 25 -25 1.2 ICE = 1mA TJ, JUNCTION TEMPERATURE (°C) 1000 10 0.1 10000 100 1 25 -25 175 125 75 -50 0 50 100 150 VCES = 250V VECS = 24V VCES = 300V 25 175 125 75 50 100 150 TJ, JUNCTION TEMPERATURE (°C) 12 10 8 6 4 2 ICE = 6.5A, VGE = 5V, RG = 1KΩ Resistive tOFF Inductive tOFF Resistive tON |
同様の部品番号 - ISL9V3040S3ST |
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同様の説明 - ISL9V3040S3ST |
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