TN6729A

PNP General Purpose Amplifier

This device is designed for general purpose medium power

amplifiers and switches requiring collector currents to 800

mA. Sourced from Process 79.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

NZT6729

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

80

V

Collector-Base Voltage

80

V

Emitter-Base Voltage

5.0

V

Collector Current - Continuous

1.0

A

Operating and Storage Junction Temperature Range

-55 to +150

°C

Symbol

Characteristic

Max

Units

TN6729A

*NZT6729

Total Device Dissipation

Derate above 25

°C

1.0

8.0

1.0

8.0

W

mW/

°C

Thermal Resistance, Junction to Case

50

°C/W

Thermal Resistance, Junction to Ambient

125

125

°C/W

 1997 Fairchild Semiconductor Corporation

B

C

C

SOT-223

E

TO-226

C

B

E

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

3) All voltages (V) and currents (A) are negative polarity for PNP transistors.