データシートサーチシステム |
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NE3210S01-T1B データシート(PDF) 1 Page - California Eastern Labs |
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NE3210S01-T1B データシート(HTML) 1 Page - California Eastern Labs |
1 / 7 page 2.0 ± 0.2 0.65 TYP 4 2 3 1 0.5 TYP 2.0±0.2 1.9 ± 0.2 0.125 ± 0.05 1.6 0.4 MAX 4.0 ± 0.2 1.5 MAX K NEC's SUPER LOW NOISE HJ FET NE3210S01 DESCRIPTION NEC's NE3210S01 is a pseudomorphic Hetero-Junction FET thatusesthejunction betweenSi-dopedAIGaAsandundoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling. Its excellent low noise figure and high associated gain make it suitable for DBS and commercial systems. The NE 3210S01 is housed in a low cost plastic package which is available in tape and reel. NEC's stringent quality assurance and test procedures assure the highest reliability and performance. FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB TYP at f = 12 GHz • HIGH ASSOCIATED GAIN: 13.5 dB TYP at f = 12 GHz • GATE LENGTH: LG ≤ 0.20 μm • GATE WIDTH: WG = 160 μm PART NUMBER NE3210S01 PACKAGE OUTLINE S01 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX GA Associated Gain1, VDS = 2 V, ID = 10 mA, f = 12 GHz dB 12 13.5 NF Noise Figure1, VDS = 2 V, ID = 10 mA, f = 12 GHz dB 0.35 0.45 gm Transconductance, VDS = 2 V, ID = 10 mA mS 40 55 IDSS Saturated Drain Current, VDS = 2 V, VGS = 0 V mA 15 40 70 VP Gate to Source Cutoff Voltage, VDS = 2 V, ID = 100 μA V -0.2 -0.7 -2.0 IGSO Gate to Source Leakage Current, VGS = -3 V uA 0.5 10 ELECTRICAL CHARACTERISTICS (TA= 25°C) PACKAGE OUTLINE SO1 1. Source 2. Drain 3. Source 4. Gate OUTLINE DIMENSION (Units in mm) Note: 1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line as a "go-no-go" screening tuned for the "generic" type but not each specimen. California Eastern Laboratories |
同様の部品番号 - NE3210S01-T1B |
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同様の説明 - NE3210S01-T1B |
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