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NE3210S01-T1B データシート(PDF) 1 Page - California Eastern Labs

部品番号 NE3210S01-T1B
部品情報  SUPER LOW NOISE HJ FET
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メーカー  CEL [California Eastern Labs]
ホームページ  http://www.cel.com
Logo CEL - California Eastern Labs

NE3210S01-T1B データシート(HTML) 1 Page - California Eastern Labs

  NE3210S01-T1B Datasheet HTML 1Page - California Eastern Labs NE3210S01-T1B Datasheet HTML 2Page - California Eastern Labs NE3210S01-T1B Datasheet HTML 3Page - California Eastern Labs NE3210S01-T1B Datasheet HTML 4Page - California Eastern Labs NE3210S01-T1B Datasheet HTML 5Page - California Eastern Labs NE3210S01-T1B Datasheet HTML 6Page - California Eastern Labs NE3210S01-T1B Datasheet HTML 7Page - California Eastern Labs  
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2.0 ± 0.2
0.65 TYP
4
2
3
1
0.5
TYP
2.0±0.2
1.9 ± 0.2
0.125 ± 0.05
1.6
0.4 MAX
4.0 ± 0.2
1.5 MAX
K
NEC's SUPER LOW
NOISE HJ FET NE3210S01
DESCRIPTION
NEC's NE3210S01 is a pseudomorphic Hetero-Junction FET
thatusesthejunction betweenSi-dopedAIGaAsandundoped
InGaAs to create very high mobility electrons. The device
features mushroom shaped TiAl gates for decreased gate
resistance and improved power handling. Its excellent low
noise figure and high associated gain make it suitable for DBS
and commercial systems. The NE 3210S01 is housed in a low
cost plastic package which is available in tape and reel.
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
FEATURES
• SUPER LOW NOISE FIGURE:
0.35 dB TYP at f = 12 GHz
• HIGH ASSOCIATED GAIN:
13.5 dB TYP at f = 12 GHz
• GATE LENGTH: LG ≤ 0.20 μm
• GATE WIDTH: WG = 160 μm
PART NUMBER
NE3210S01
PACKAGE OUTLINE
S01
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
GA
Associated Gain1, VDS = 2 V, ID = 10 mA, f = 12 GHz
dB
12
13.5
NF
Noise Figure1, VDS = 2 V, ID = 10 mA, f = 12 GHz
dB
0.35
0.45
gm
Transconductance, VDS = 2 V, ID = 10 mA
mS
40
55
IDSS
Saturated Drain Current, VDS = 2 V, VGS = 0 V
mA
15
40
70
VP
Gate to Source Cutoff Voltage, VDS = 2 V, ID = 100 μA
V
-0.2
-0.7
-2.0
IGSO
Gate to Source Leakage Current, VGS = -3 V
uA
0.5
10
ELECTRICAL CHARACTERISTICS (TA= 25°C)
PACKAGE OUTLINE SO1
1. Source
2. Drain
3. Source
4. Gate
OUTLINE DIMENSION (Units in mm)
Note:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production
line
as a "go-no-go" screening tuned for the "generic" type but not each specimen.
California Eastern Laboratories


同様の部品番号 - NE3210S01-T1B

メーカー部品番号データシート部品情報
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NE3210S01-T1B NEC-NE3210S01-T1B Datasheet
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NE3210S01-T1B RENESAS-NE3210S01-T1B Datasheet
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