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PZT3904 データシート(PDF) 3 Page - NXP Semiconductors |
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PZT3904 データシート(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1999 Apr 14 3 Philips Semiconductors Product specification NPN switching transistor PZT3904 THERMAL CHARACTERISTICS Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. CHARACTERISTICS Tj =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 117 K/W Rth j-s thermal resistance from junction to soldering point 36 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB =30V − 50 nA IEBO emitter cut-off current IC = 0; VEB =6V − 50 nA hFE DC current gain VCE = 1 V; (see Fig.2) IC = 0.1 mA 60 − IC = 1 mA 80 − IC = 10 mA 100 300 IC =50mA 60 − IC = 100 mA 30 − VCEsat saturation voltage IC = 10 mA; IB =1mA − 200 mV IC = 50 mA; IB =5mA − 200 mV VBEsat saturation voltage IC = 10 mA; IB =1mA − 850 mV IC = 50 mA; IB =5mA − 950 mV Cc collector capacitance IE =ie = 0; VCB =5V; f=1MHz − 4pF Ce emitter capacitance IC =ic = 0; VEB = 500 mV; f = 1 MHz − 8pF fT transition frequency IC = 10 mA; VCE = 20 V; f = 100 MHz 300 − MHz F noise figure IC = 100 µA; VCE =5V; RS =1kΩ; f = 10 Hz to 15.7 kHz − 5dB Switching times (between 10% and 90% levels); (see Fig.3) ton turn-on time ICon = 10 mA; IBon = 1 mA; IBoff = −1mA − 65 ns td delay time − 35 ns tr rise time − 35 ns toff turn-off time − 240 ns ts storage time − 200 ns tf fall time − 50 ns |
同様の部品番号 - PZT3904 |
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同様の説明 - PZT3904 |
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