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PZT3906 データシート(PDF) 3 Page - NXP Semiconductors |
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PZT3906 データシート(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1999 Apr 14 3 Philips Semiconductors Product specification PNP switching transistor PZT3906 THERMAL CHARACTERISTICS Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. CHARACTERISTICS Tj =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 115 K/W Rth j-s thermal resistance from junction to soldering point 34 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = −30 V −−50 nA IEBO emitter cut-off current IC = 0; VEB = −6V −−50 nA hFE DC current gain VCE = −1 V; (see Fig.2) IC = −0.1 mA 60 − IC = −1mA 80 − IC = −10 mA 100 300 IC = −50 mA 60 − IC = −100 mA 30 − VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −1mA −−200 mV IC = −50 mA; IB = −5mA −−200 mV VBEsat base-emitter saturation voltage IC = −10 mA; IB = −1mA −650 −850 mV IC = −50 mA; IB = −5mA −−950 mV Cc collector capacitance IE =ie = 0; VCB = −5 V; f = 1 MHz − 4.5 pF Ce emitter capacitance IC =ic = 0; VEB = −500 mV; f = 1 MHz − 10 pF fT transition frequency IC = −10 mA; VCE = −20 V; f = 100 MHz 250 − MHz F noise figure IC = −100 µA; VCE = −5 V; RS =1kΩ; f = 10 Hz to 15.7 kHz − 4dB Switching times (between 10% and 90% levels); (see Fig.3) ton turn-on time ICon = −10 mA; IBon = −1 mA; IBoff =1mA − 65 ns td delay time − 35 ns tr rise time − 35 ns toff turn-off time − 300 ns ts storage time − 225 ns tf fall time − 75 ns |
同様の部品番号 - PZT3906 |
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同様の説明 - PZT3906 |
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