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RZ1214B65Y データシート(PDF) 4 Page - NXP Semiconductors |
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RZ1214B65Y データシート(HTML) 4 Page - NXP Semiconductors |
4 / 8 page 1999 Dec 24 4 Philips Semiconductors Product specification NPN microwave power transistor RZ1214B65Y THERMAL CHARACTERISTICS Tj =75 °C unless otherwise specified. Notes 1. See “Mounting recommendations in the General part of associated Handbook”. 2. Equivalent thermal impedance under pulsed microwave operating conditions. CHARACTERISTICS Tmb =25 °C unless otherwise specified. APPLICATION INFORMATION The transistors are 100% tested under the following conditions. SYMBOL PARAMETER CONDITIONS MAX. UNIT Rth j-mb thermal resistance from junction to mounting-base 2.5 K/W Rth mb-h thermal resistance from mounting-base to heatsink note 1 0.2 K/W Zth j-h thermal resistance from junction to heatsink tp = 100 µs; δ =10%; notes 1 and 2 0.55 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V(BR)CBO collector-base breakdown voltage IC = 40 mA; IE =0 65 − V V(BR)CES collector-emitter breakdown voltage IC = 40 mA; RBE =0 60 − V ICBO collector cut-off current VCB = 50 V; IE =0 − 4mA IEBO emitter cut-off current VEB = 1.5 V; IC =0 − 0.4 mA MODE OF OPERATION CONDITIONS f (GHz) VCC (V) PL (W) Gp (dB) ηC (%) Zi; ZL ( Ω) Class-C tp = 150 µs; δ = 5% 1.2 to 1,4 50 typ.80; >70 typ.7.8; >7 typ.40; >35 see Fig 4 tp = 300 µs; δ = 10% 1.2 to 1,4 50 typ.80; typ.7 typ.30 see Fig 4 |
同様の部品番号 - RZ1214B65Y |
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同様の説明 - RZ1214B65Y |
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