tm

March 2007

©2007 Fairchild Semiconductor Corporation

FDD8424H Rev.C

www.fairchildsemi.com

1

FDD8424H

N-Channel: 40V, 20A, 24m

Ω P-Channel: -40V, -20A, 54mΩ

Features

Q1: N-Channel

Q2: P-Channel

Fast switching speed

RoHS Compliant

General Description

These dual N and P-Channel enhancement

mode Power

MOSFETs are produced using Fairchild Semiconductor’s

advanced PowerTrench- process that has been especially

tailored

to minimize on-state resistance and

yet

maintain

superior switching performance.

Application

Inverter

H-Bridge

Thermal Characteristics

Package Marking and Ordering Information

Symbol

Parameter

Q1

Q2

Units

Drain to Source Voltage

40

-40

V

Gate to Source Voltage

±20

±20

V

Drain Current

- Continuous (Package Limited)

20

-20

A

- Continuous (Silicon Limited)

26

-20

- Continuous

9.0

-6.5

- Pulsed

55

-40

Power Dissipation for Single Operation

(Note 1)

30

35

W

3.1

1.3

Single Pulse Avalanche Energy

(Note 3)

29

33

mJ

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Resistance, Junction to Case, Single Operation for Q1

(Note 1)

4.1

°C/W

Thermal Resistance, Junction to Case, Single Operation for Q2

(Note 1)

3.5

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDD8424H

FDD8424H

TO-252-4L

13”

12mm

2500 units

Dual DPAK 4L

D1/D2

G2

S2

G1

S1

N-Channel

P-Channel

D1

D2

S1

G1

S2

G2